Thin chalcogenide thin films with varying concentrations of Sn were deposited with a PECVD reactor. In this study SnCl4 was added to the PECVD of GeS2 films, at various concentrations, to study the effect of Sn addition on the structure of the thin films and their behavior in RRAM memory devices. SnCl4 was added to produce GexSnySz films containing 2%, 8%, 15%, 26%, and 34% Sn based on atomic percentage. Raman spectroscopy and X-ray diffraction were used to probe structural changes and similarities in the deposited films. Based on the information from these depositions simple RRAM devices were constructed at low Sn content (5%), middle Sn content (15%), and relatively high Sn content (25%), and the current-voltage curves were measured and compared for the devices made with Sn content at these low, middle, and high atomic content ranges.
